PREPARATION AND EVALUATION OF PB(ZR.TI)O3 THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

TOMONARI, H

ISHIU, T

SAKATA, K

TAKENAKA, T

机构：

[1] Science University of Tokyo, Noda, Chiba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

MOCVD METHOD; FERROELECTRIC; THIN FILMS; PZT; DPM;

D O I：

10.1143/JJAP.31.2998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dipivaloylmethane (DPM) metalorganic precursors, Pb(DPM)2, Zr(DPM)4 and Ti(OPr(i))2(DPM)2, are used as starting materials in the metalorganic chemical vapor deposition (MOCVD) method for the preparation of Pb(ZrxTi1-x)O3 (PZT) thin films. The films are deposited at the rate of 150 to 700 angstrom/min under atmospheric pressure and reduced pressure of 10 - 30 Torr. The deposition rate is about ten times as high as that of the conventional sputtering method. The dielectric constant of the film (X = 0.2) on a Pt/Si substrate is about 300 at room temperature. This value agrees with that of ceramic or sputtered films.

引用

页码：2998 / 3000

页数：3

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