MECHANICAL-STRESS IN THE CRYSTALLIZATION PROCESS OF AMORPHOUS-SEMICONDUCTORS BY PULSE ACTION

被引：4

作者：

ALEKSANDROV, LN

机构：

[1] Acad of Sciences of the USSR, Novosibirsk, USSR, Acad of Sciences of the USSR, Novosibirsk, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 106卷 / 02期

关键词：

D O I：

10.1002/pssa.2211060244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K135 / K138

页数：4

共 12 条

[1] ABROYAN IA, 1984, FIZ TEKH POLUPROV, V18, P628
[2] THERMAL AND PLASMA MODELS OF PULSED HEATING OF THIN-FILMS
ALEKSANDROV, LN
[J]. VACUUM, 1986, 36 (7-9) : 455 - 463
[3] SIMULATION OF THE INFLUENCE OF MECHANICAL STRESSES ON THE KINETICS OF CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS UNDER PULSE HEATING
ALEKSANDROV, LN
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : 443 - 449
[4] ALEKSANDROV LN, 1985, PISMA ZH TEKH FIZ+, V11, P286
[5] ALEKSANDROV LN, 1987, AVTOMETRIYA, P64
[6] ALEKSANDROV LN, 1984, PHYS RAD DAMAGE MATE, V31, P73
[7] BALANDIN VY, 1986, ZH TEKH FIZ+, V56, P807
[8] STRAIN IN SELF-IMPLANTED SILICON
CHAMI, AC
LIGEON, E
DANIELOU, R
FONTENILLE, J
EYMERY, R
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 161 - 165
[9] STRESSES IN SILICON-CRYSTALS FROM ION-IMPLANTED AMORPHOUS REGIONS
HORA, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (04): : 217 - 221
[10] Kvasov E.E., 1984, FIZ TEKH POLUPROV, V18, P747