STRAIN IN SELF-IMPLANTED SILICON

[1] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 237 - 240

[2] ANOMALOUS DEFECT INTERACTION AND AMORPHIZATION DURING SELF-IRRADIATION OF SI CRYSTALS AT 450-K [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : K81 - K84

[3] SUPER-LATTICE INTERFACE AND LATTICE STRAIN-MEASUREMENT BY ION CHANNELING [J]. PHYSICAL REVIEW B, 1983, 28 (07): : 4033 - 4036

[4] COMPACTION OF ION-IMPLANTED FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 167 - 174

[5] DIRECT DETERMINATION OF ELASTIC STRAIN IN STRAINED-LAYER SUPERLATTICES BY HIGH-ANGLE X-RAY INTERFERENCES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 803 - 805

[6] Feldman L.C., 1982, MAT ANAL ION CHANNEL, P88

[7] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[8] AXIAL DECHANNELING .2. POINT-DEFECTS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) : 55 - 62

[9] COLLISION CASCADES IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 419 - 425

[10] KOLLEWE K, 1984, NUCL INSTRUM METHO B, V2, P729

[1] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 237 - 240

[2] ANOMALOUS DEFECT INTERACTION AND AMORPHIZATION DURING SELF-IRRADIATION OF SI CRYSTALS AT 450-K [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : K81 - K84

[3] SUPER-LATTICE INTERFACE AND LATTICE STRAIN-MEASUREMENT BY ION CHANNELING [J]. PHYSICAL REVIEW B, 1983, 28 (07): : 4033 - 4036

[4] COMPACTION OF ION-IMPLANTED FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 167 - 174

[5] DIRECT DETERMINATION OF ELASTIC STRAIN IN STRAINED-LAYER SUPERLATTICES BY HIGH-ANGLE X-RAY INTERFERENCES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 803 - 805

[6] Feldman L.C., 1982, MAT ANAL ION CHANNEL, P88

[7] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[8] AXIAL DECHANNELING .2. POINT-DEFECTS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) : 55 - 62

[9] COLLISION CASCADES IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 419 - 425

[10] KOLLEWE K, 1984, NUCL INSTRUM METHO B, V2, P729