A NEW ANALYTICAL MODEL FOR THE GAAS-MESFET IN THE SATURATION REGION

被引：10

作者：

POUVIL, P

GAUTIER, JL

PASQUET, D

机构：

[1] ENSEA, Cergy, Fr

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1215 / 1222

页数：8

共 11 条

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[3]

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[4] SEMI-EMPIRICAL EXPRESSION FOR DIRECT TRANSCONDUCTANCE AND EQUIVALENT SATURATED VELOCITY IN SHORT-GATE-LENGTH MESFETS [J].

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[5]

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[7] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J].

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REISER, M .

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[8]

POUVIL P, 1977, THESIS ORSAY

[9]

SHOCKLEY W, 1952, P IRE, V40, P1305

[10]

SONE JI, 1978, IEEE T ELECTRON DEV, V25, P329

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