SATURATION MECHANISM IN 1-MUM GATE GAAS-FET WITH CHANNEL-SUBSTRATE INTERFACIAL BARRIER

被引：29

作者：

BONJOUR, P ^{[1
]}

CASTAGNE, R ^{[1
]}

PONE, JF ^{[1
]}

COURAT, JP ^{[1
]}

BERT, G ^{[1
]}

NUZILLAT, G ^{[1
]}

PELTIER, M ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1019 / 1024

页数：6

共 18 条

[1] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].

CARNEZ, B ;

CAPPY, A ;

KASZYNSKI, A ;

CONSTANT, E ;

SALMER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790

[2]

CARNEZ B, COMMUNICATION

[3]

CONVERT G, 1978, COMMUNICATION DEC

[4]

Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351

[5] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].

ENGELMANN, RWH ;

LIECHTI, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296

[6] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].

HOUNG, YM ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352

[7]

ITOM T, 1978, 7TH P S GAAS REL COM

[8] HOT-ELECTRON RELAXATION EFFECTS IN DEVICES [J].

KROEMER, H .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :61-67

[9] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J].

MALONEY, TJ ;

FREY, J .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :781-787

[10]

REISER M, 1973, IEEE T ELECTRON DEVI, V20

← 1 2 →