HIGH-TEMPERATURE HIGH-PURITY SOURCE FOR METAL BEAM EPITAXY

[1] INVESTIGATION OF INORGANIC SYSTEMS AT HIGH TEMPERATURE BY MASS SPECTROMETRY [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1967, 6 (07) : 581 - +

[2] FARBER M, 1972, J CHEM SOC FARADAY T, V68, pA24

[3] ASSIGNMENT OF ION CURRENTS DETECTED IN MASS-SPECTRUM OF A MOLECULAR-BEAM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (04) : L48 - L52

[4] EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : L135 - L138

[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448

[6] FARROW RFC, 1977, CRYSTAL GROWTH MATER

[7] FARROW RFC, 1978, 4TH P INT C VAP GROW

[8] HULTGREN R, 1963, SELECTED VALUES THER

[9] Kubaschewski O., 1967, METALLURGICAL THERMO

[10] NELSON RS, 1978, COMMUNICATION

[1] INVESTIGATION OF INORGANIC SYSTEMS AT HIGH TEMPERATURE BY MASS SPECTROMETRY [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1967, 6 (07) : 581 - +

[2] FARBER M, 1972, J CHEM SOC FARADAY T, V68, pA24

[3] ASSIGNMENT OF ION CURRENTS DETECTED IN MASS-SPECTRUM OF A MOLECULAR-BEAM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (04) : L48 - L52

[4] EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : L135 - L138

[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448

[6] FARROW RFC, 1977, CRYSTAL GROWTH MATER

[7] FARROW RFC, 1978, 4TH P INT C VAP GROW

[8] HULTGREN R, 1963, SELECTED VALUES THER

[9] Kubaschewski O., 1967, METALLURGICAL THERMO

[10] NELSON RS, 1978, COMMUNICATION