ZN DIFFUSION ENHANCEMENT OF INTERDIFFUSION IN A GAAS-INGAPAS HETEROSTRUCTURE

被引：11

作者：

PARK, HH ^{[1
]}

LEE, KH ^{[1
]}

STEVENSON, DA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期

关键词：

D O I：

10.1063/1.100259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2299 / 2301

页数：3

共 17 条

[1] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].

CAMRAS, MD ;

HOLONYAK, N ;

HESS, K ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187

[2]

CASEY HC, 1968, T METALL SOC AIME, V242, P406

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[5] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[6] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[7] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

LAIDIG, WD ;

LEE, JW ;

CHIANG, PK ;

SIMPSON, LW ;

BEDAIR, SM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6382-6384

[8]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[9] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J].

LEE, JW ;

LAIDIG, WD .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :147-165

[10] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

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