2.0 PS, 150 GHZ GAAS MONOLITHIC PHOTODIODE AND ALL-ELECTRONIC SAMPLER

被引：20

作者：

OZBAY, E

LI, KD

BLOOM, DM

机构：

[1] Edward L. Ginzton Laboratory, Stanford University, Stanford, CA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 06期

关键词：

D O I：

10.1109/68.91038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultrafast GaAs Schottky photodiode is monolithically integrated with an all-electronic sampler. The high-speed photodiode-electronic-sampling circuit has a temporal response of 2.0 ps full-width-at-half-maximum (FWHM) corresponding to a 3-dB bandwidth of 150 GHz. The photodiode has an external quantum efficiency of 33%. To our knowledge, this is the fastest photodiode ever reported.

引用

页码：570 / 572

页数：3

共 7 条

[1] KAMEGAWA M, 1991, PICOSEC ELECTRON MAR
[2] MARSLAND RA, 1989, APPL PHYS LETT, V23, P592
[3] MARSLAND RA, 1990 GAAS IC S NEW O
[4] OZBAY E, 1991, PICOSEC ELECTRON MAR
[5] 110GHZ HIGH-EFFICIENCY PHOTODIODES FABRICATED FROM INDIUM TIN OXIDE-GAAS
PARKER, DG
SAY, PG
HANSOM, AM
SIBBETT, W
[J]. ELECTRONICS LETTERS, 1987, 23 (10) : 527 - 528
[6] 100 GHZ BANDWIDTH PLANAR GAAS SCHOTTKY PHOTO-DIODE
WANG, SY
BLOOM, DM
[J]. ELECTRONICS LETTERS, 1983, 19 (14) : 554 - 555
[7] WEY YG, 1991, FEB OFC

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