THE EFFECT OF GROWTH TEMPERATURE ON ALAS GAAS RESONANT-TUNNELING DIODES

被引：11

作者：

FORSTER, A ^{[1
]}

LANGE, J ^{[1
]}

GERTHSEN, D ^{[1
]}

DIEKER, C ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH,INST FESTKORPERFORSCH,D-52425 JULICH,GERMANY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 01期

关键词：

D O I：

10.1088/0022-3727/27/1/028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we report on a systematic investigation of the influence of the growth temperature on the current voltage (I-V) characteristics of symmetric AlAs/GaAs double-barrier tunnelling diodes grown by molecular beam epitaxy (MBE) and a correlation between electrical and structural properties. It is shown by high-resolution transmission electron microscopy (HRTEM) that the growth temperature affects the interface roughness and the symmetry of the double-barrier region. Both the microstructure of the interfaces and the Si doping spreading in the double-barrier region have a significant influence on the peak-to-valley ratio (PVR) and the symmetry of the I-V characteristic. The substrate temperature was varied from 480 to 680-degrees-C. It is demonstrated that the highest PVRS at room temperature are found for samples grown in the temperature range 580-600-degrees-C.

引用

页码：175 / 178

页数：4

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