GAS-PHASE REACTION STUDY OF DISILANE PYROLYSIS - APPLICATIONS TO LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

被引:10
作者
JOHANNES, JE
EKERDT, JG
机构
[1] Department of Chemical Engineering, University of Texas, Austin
关键词
D O I
10.1149/1.2055074
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The gas-phase thermal reactions during disilane decomposition at low pressure chemical vapor deposition conditions were studied from 300 to 1000 K using resonance enhanced multiphoton ionization (REMPI) and multiphoton ionization (MPI). REMPI of gas-phase Si, mass 28, was detected from 640 to 840 K and 1 to 10 Torr, with a maximum signal intensity between 700 to 720 K. During disilane decomposition, no SiH (427.8 nm), SiH2 (494-515 nm), or SiH3 (419.0 nm) was detected. MPI of higher silanes, silenes, and silylenes were detected through mass fragments 2, 32, and 60; these species reached a maximum signal intensity 20 degrees prior to the mass-28 maximum. Modeling studies that included a detailed low pressure gas-phase kinetic scheme predict relative gas-phase partial pressures generated during disilane pyrolysis. The model predicted experimental trends in the Si partial pressure and the higher silane, silene, and silylene partial pressures.
引用
收藏
页码:2135 / 2140
页数:6
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