REACTIVE STICKING COEFFICIENTS FOR SILANE AND DISILANE ON POLYCRYSTALLINE SILICON

被引：180

作者：

BUSS, RJ

HO, P

BREILAND, WG

COLTRIN, ME

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2808 / 2819

页数：12

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[8] REACTIVE SCATTERING FROM SOLID SURFACES
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[9] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1691 - 1697
[10] THE SURFACE-CHEMISTRY OF THE THERMAL-CRACKING OF SILANE ON SILICON (111)
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