LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS

被引：52

作者：

DONAHUE, TJ

REIF, R

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108995

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

16

引用

收藏

页码：1691 / 1697

页数：7

相关论文

共 16 条

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE
BEERS, AM
BLOEM, J
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155
[2] BLOEM J, 1978, CURRENT TOPICS MATER, V1
[3] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES
CADORET, R
HOTTIER, F
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 259 - 274
[4] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P4
[5] COBURN JW, 1982, AM VACUUM SOC MONOGR, P49
[6] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
DONAHUE, TJ
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[7] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637
[8] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
HOTTIER, F
CADORET, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 245 - 258
[9] KERN W, 1970, RCA REV, V31, P187
[10] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING
OTA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1102 - 1110