ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] CHARACTERIZATION AND COMPARISON OF AUGER-ELECTRON SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION OF MONO-CRYSTALLINE, AMORPHOUS AND HYDROGENATED SILICON [J]. APPLIED SURFACE SCIENCE, 1980, 4 (02) : 221 - 233

[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

[4] BLOEM J, COMMUNICATION

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 259 - 274

[7] Cadoret R., 1980, CURRENT TOPICS MATER, V5, P219

[8] Chernov A. A., 1977, Soviet Physics - Crystallography, V22, P18

[9] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[10] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] CHARACTERIZATION AND COMPARISON OF AUGER-ELECTRON SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION OF MONO-CRYSTALLINE, AMORPHOUS AND HYDROGENATED SILICON [J]. APPLIED SURFACE SCIENCE, 1980, 4 (02) : 221 - 233

[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

[4] BLOEM J, COMMUNICATION

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 259 - 274

[7] Cadoret R., 1980, CURRENT TOPICS MATER, V5, P219

[8] Chernov A. A., 1977, Soviet Physics - Crystallography, V22, P18

[9] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[10] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637