SHARP 1.54 MU-M LUMINESCENCE FROM POROUS ERBIUM IMPLANTED SILICON

被引：17

作者：

TASKIN, T

GARDELIS, S

EVANS, JH

HAMILTON, B

PEAKER, AR

机构：

[1] Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester, M60 1QD

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 24期

关键词：

LUMINESCENCE; POROUS SILICON;

D O I：

10.1049/el:19951439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sharp luminescence at 1.54 mu m from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.

引用

页码：2132 / 2133

页数：2

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