THE EFFECT OF SURFACE MODIFICATION ON THE LUMINESCENCE OF POROUS SILICON

被引:45
作者
GARDELIS, S
HAMILTON, B
机构
[1] Department of Pure and Applied Physics, University of Manchester, Institute of Science and Technology, Manchester M60 1QD, Sackville Street
关键词
D O I
10.1063/1.357184
中图分类号
O59 [应用物理学];
学科分类号
摘要
The role of the surface in the optical properties of porous silicon remains a key issue. Although the burden of evidence points toward some intrinsic radiative mechanism in small silicon particles, the influence of the surface and ways of controlling surface interactions will always be important. We present here the results of surface modification of porous silicon using annealing and rapid oxidation steps. By comparing new results with existing published data we conclude that hydrogen passivation of the surface is not unique in its ability to saturate dangling bonds and hence promote strong luminescence; oxidation, especially at high temperatures, can play a similar role. Oxidation also produces an additional, low energy band which is linked to residual dangling bond related defects at the Si-SiO2 interface. Furthermore, this band suffers a blue shift with increasing porosity in similar fashion to that observed for the visible emission.
引用
收藏
页码:5327 / 5333
页数:7
相关论文
共 39 条
[1]   STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON [J].
BATSTONE, JL ;
TISCHLER, MA ;
COLLINS, RT .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2667-2669
[2]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].
CANHAM, LT ;
HOULTON, MR ;
LEONG, WY ;
PICKERING, C ;
KEEN, JM .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431
[5]   PARAMAGNETIC DEFECTS IN SILICON-SILICON DIOXIDE SYSTEMS [J].
CAPLAN, PJ ;
HELBERT, JN ;
WAGNER, BE ;
POINDEXTER, EH .
SURFACE SCIENCE, 1976, 54 (01) :33-42
[6]   PHOTO-LUMINESCENCE IN THE AMORPHOUS SYSTEM SIOX [J].
CARIUS, R ;
FISCHER, R ;
HOLZENKAMPFER, E ;
STUKE, J .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4241-4243
[7]  
CULLIS AG, 1993, NATO ADV SCI INST SE, V244, P147
[8]   UNIMPORTANCE OF SILOXENE IN THE LUMINESCENCE OF POROUS SILICON [J].
FRIEDMAN, SL ;
MARCUS, MA ;
ADLER, DL ;
XIE, YH ;
HARRIS, TD ;
CITRIN, PH .
APPLIED PHYSICS LETTERS, 1993, 62 (16) :1934-1936
[9]   EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE [J].
GARDELIS, S ;
RIMMER, JS ;
DAWSON, P ;
HAMILTON, B ;
KUBIAK, RA ;
WHALL, TE ;
PARKER, EHC .
APPLIED PHYSICS LETTERS, 1991, 59 (17) :2118-2120
[10]  
GARDELIS S, 1992, MATER RES SOC SYMP P, V256, P149