STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON

被引：35

作者：

BATSTONE, JL

TISCHLER, MA

COLLINS, RT

机构：

[1] IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

11;

D O I：

10.1063/1.109279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.

引用

收藏

页码：2667 / 2669

页数：3

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