Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects

被引：17

作者：

Bauer, Jan ^{[1
]}

Lausch, Dominik ^{[2
]}

Blumtritt, Horst ^{[1
]}

Zakharov, Nikolai ^{[1
]}

Breitenstein, Otwin ^{[1
]}

机构：

[1] Max Planck Institute of Microstructure Physics, 06120 Halle

[2] Fraunhofer Center for Silicon Photovoltaics CSP, Halle

来源：

Bauer, J. (jbauer@mpi-halle.mpg.de) | 1600年 / John Wiley and Sons Ltd卷 / 21期

关键词：

alkaline texture; avalanche breakdown; breakdown voltage; multicrystalline solar cells; p-n junction;

D O I：

10.1002/pip.2220

中图分类号：

学科分类号：

摘要：

Multicrystalline solar cells break down strongly at reverse voltages well below the theoretical limit. Previous explanations were based on assuming a constant depth of the junction below the surface. In this work, preferred phosphorous diffusion at special line defects in grain boundaries is shown to lead to spikes in the p-n junctions even below flat surfaces. The curvature radii of the spherical p-n junction bending are measured by electron beam-induced current to be in the range of 300-500 nm, leading to the observed type III avalanche breakdown voltages. Copyright © 2012 John Wiley & Sons, Ltd.

引用

页码：1444 / 1453

页数：9

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