THERMAL-CONDUCTIVITY AND ELECTRICAL-PROPERTIES OF 6H SILICON-CARBIDE

被引：134

作者：

BURGEMEISTER, EA

VONMUENCH, W

PETTENPAUL, E

机构：

[1] INST HALBLEITERTECH,D-7000 STUTTGART,FED REP GER

[2] SIEMENS AG,D-8000 MUNICH 80,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal conductivity measurements of 6H SiC crystals were done in the 300-500 K range by means of radiation thermometry. Both p- and n-type crystals with carrier concentrations in the 8×1015 to 1020 cm-3 range were used. For the purest samples it was found that the thermal conductivity normal to the c axis is proportional to T-1.49, the room-temperature value being 3.87 W/cm deg. It was also found that the thermal conductivity parallel to the c axis is about 30% lower than that normal to the c axis. Electrical data in the 100-1000 K range are also presented.

引用

页码：5790 / 5794

页数：5

共 19 条

[1]

Berman R., 1976, THERMAL CONDUCTION S

[2]

BOSCH G, 1961, PHILIPS RES REP, V16, P455

[3] THERMAL-CONDUCTIVITY OF NATURAL DIAMOND BETWEEN 320 AND 450 K [J].

BURGEMEISTER, EA .

PHYSICA B & C, 1978, 93 (02) :165-179

[4] THERMAL-RESISTANCE AT METAL-DIAMOND INTERFACES IN RELATION TO MOUNTING OF MICROWAVE DIODES [J].

BURGEMEISTER, EA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) :1923-1930

[5]

BURGEMEISTER EA, 1978, PHYSICA B & C, V94, P366

[6]

BURGEMEISTER EA, 1975, IND DIAMOND REV, P242

[7]

BURGEMEISTER EA, UNPUBLISHED

[8]

CAMPBELL RB, 1971, SEMICONDUCT SEMIMET, V7, P625

[9] HIGH-POWER IMPATT DIODES ON DIAMOND HEAT SINKS [J].

DECKER, DR ;

SCHORR, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :739-+

[10] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

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