ANGLE-OF-INCIDENCE EFFECTS IN ELECTRON-BEAM-DEPOSITED SNO2-SI SOLAR-CELLS

被引：20

作者：

FENG, T

GHOSH, AK

FISHMAN, C

机构：

[1] Exxon Research and Engineering Co., Linden

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 03期

关键词：

D O I：

10.1063/1.90728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The power-conversion efficiency of SnO2/Si solar cells fabricated by electron-beam evaporation of SnO2 is strongly dependent on the angle of incidence of the SnO2 vapor stream on silicon. The optimum angle of incidence is between 50°and 70°. Solar cells with power-conversion efficiencies exceeding 10% have been reproducibly fabricated by depositing the SnO2 at angles of incidence in this optimum range.

引用

页码：198 / 199

页数：2