共 13 条
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Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes. WindischR,RoomanC,MeinlschmidtS,et al. Applied Physics Letters . 2001
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Temperature dependence of the threshold current forInGaAlP visible laser diodes. IshikawaM,ShiozawaH,ItayaK,et al. IEEE Journal of Quantum Electronics . 1991
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4xEfficiency improvement in transpatent-substrate(AlxGa1-x)0.5In0.5P light-emitting diodes with thin(≤2000)active regions. GardnerN F,ChuiH C,ChenE I,et al. Applied Physics Letters . 1998
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Surface plasmon enhanced light-emitting diode. JelenaVuckovic,MarkoLoncar,AxelScherer. IEEE Journal of Quantum Electronics . 2000
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Wafer bonding of50-mm diameterGaP toAlGaInP light-emitting diode wafers. HoflerG E,VanderwaterD A,DefevereD C,et al. Applied Physics Letters . 1996
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Ultrahigh spontaneous emission quantum efficiency,99.7% internally and72% externally fromAlGaAs/GaAs/AlGaAs double heterostructures. SchnitzerI,YablonovitchE,CaneauC,et al. Applied Physics Letters . 1993
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Impact of planar microcavity effects on light extraction-PartI: bacic concepts and analytical trends. BenistyH,DeneveH,WeisbnchC. IEEE J QuantumElcetron . 1998
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Vary high-efficiency semiconductor wafer-bonded transpatent-substrate(AlxGa1-x)0.5In0.5P/GaP light-emitting diodes. KishF A,SterankaF M,DefevereD C,et al. Applied Physics Letters . 1994