Static and low frequency noise characterization of surface-and buried-mode 0.1 μm P and N MOSFETs

This work presents the low frequency noise and the electric performances in terms of output/transfer characteristics, threshold voltage, and short channel effect in both NMOS and PMOS transistors for 0. 1 mum technologies. For the last one there are two architectures based either on a surface mode of operation (surface channel) or on a buried one (buried channel) featuring either a P+ or a N+ polysilicon gate material. The impact of the channel length on the noise characteristics as well as on the output/transfer characteristics is studied. We find that the l/f noise can be interpreted in terms of carrier number fluctuations for both N and P channel MOSFETs for surface and buried mode of operation. The oxide trap density Nt is therefore evaluated, demonstrating an overall good oxide quality. (C) 2002 Elsevier Science Ltd. All rights reserved.