NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS

被引：697

作者：

GHIBAUDO, G ^{[1
]}

机构：

[1] SACHS & FREEMAN ASSOCIATES INC, LANDOVER, MD 20785 USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1049/el:19880369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：543 / 545

页数：3

相关论文

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