A NEW AC MEASUREMENT TECHNIQUE TO ACCURATELY DETERMINE MOSFET CONSTANTS

[1] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[2] MEASUREMENT OF MOSFET CONSTANTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 10 - 12

[3] AN IMPROVED AUTOMATIC TEST SYSTEM FOR VLSI PARAMETRIC TESTING [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1982, 31 (03) : 198 - 205

[4] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +

[5] AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 360 - 362

[6] ELECTRON-MOBILITY IN SHORT-CHANNEL MOSFETS WITH SERIES RESISTANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 959 - 961

[7] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848

[8] Tsividis Y., 1982, International Electron Devices Meeting. Technical Digest, P274

[9] TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[10] HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 899 - 906

[1] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[2] MEASUREMENT OF MOSFET CONSTANTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 10 - 12

[3] AN IMPROVED AUTOMATIC TEST SYSTEM FOR VLSI PARAMETRIC TESTING [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1982, 31 (03) : 198 - 205

[4] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +

[5] AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 360 - 362

[6] ELECTRON-MOBILITY IN SHORT-CHANNEL MOSFETS WITH SERIES RESISTANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 959 - 961

[7] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848

[8] Tsividis Y., 1982, International Electron Devices Meeting. Technical Digest, P274

[9] TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[10] HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 899 - 906