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AN IMPROVED AUTOMATIC TEST SYSTEM FOR VLSI PARAMETRIC TESTING
被引:5
作者
:
FANG, RCY
论文数:
0
引用数:
0
h-index:
0
FANG, RCY
RUNG, RD
论文数:
0
引用数:
0
h-index:
0
RUNG, RD
CHAM, KM
论文数:
0
引用数:
0
h-index:
0
CHAM, KM
机构
:
来源
:
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
|
1982年
/ 31卷
/ 03期
关键词
:
D O I
:
10.1109/TIM.1982.6312558
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:198 / 205
页数:8
相关论文
共 6 条
[1]
CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG
[2]
HOWARD JS, 1978, SOLID STATE TECH JUL, P48
[3]
KAEMPF U, 1981, SOLID STATE TECH SEP, P81
[4]
KHALILY E, 1979, SEL79004 STANF U TEC
[5]
SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(02)
: 55
-
60
[6]
[No title captured]
←
1
→
共 6 条
[1]
CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG
[2]
HOWARD JS, 1978, SOLID STATE TECH JUL, P48
[3]
KAEMPF U, 1981, SOLID STATE TECH SEP, P81
[4]
KHALILY E, 1979, SEL79004 STANF U TEC
[5]
SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(02)
: 55
-
60
[6]
[No title captured]
←
1
→