LOW-TEMPERATURE MOBILITY BEHAVIOR IN SUBMICRON MOSFETS AND RELATED DETERMINATION OF CHANNEL LENGTH AND SERIES RESISTANCE

被引：29

作者：

NGUYENDUC, C

CRISTOLOVEANU, S

GHIBAUDO, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 12期

关键词：

D O I：

10.1016/0038-1101(86)90133-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1271 / 1277

页数：7

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