TRANSCONDUCTANCE DEGRADATION IN VLSI DEVICES

被引：5

作者：

AKERS, LA ^{[1
]}

HOLLY, M ^{[1
]}

FORD, JM ^{[1
]}

机构：

[1] MOTOROLA SEMICOND RES & DEV LAB,PHOENIX,AZ 85062

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 06期

关键词：

SEMICONDUCTOR DEVICES; MOS;

D O I：

10.1016/0038-1101(85)90132-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results from small geometry VLSI devices show that as devices are scaled, transconductance degradation occurs. This results from scaling either the length or width. A model using a mobility expression developed by P. Wang is used to predict transconductance in small MOS devices. Comparison between theory and experiments is excellent.

引用

页码：605 / 609

页数：5

共 14 条

[1] AKERS L, 1981, SOLID ST ELECTRON, V25, P621
[2] Baccarani G., 1982, International Electron Devices Meeting. Technical Digest, P278
[3] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295
[4] CHIU KY, 1982, IEEE T ELECTRON DEV, V29, P536, DOI 10.1109/T-ED.1982.20739
[5] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI
ELMANSY, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573
[6] FITCHTNER W, 1982, IEEE ELECTRON DEVICE, V3, P412
[7] MOBILITY DEGRADATION DUE TO THE GATE FIELD IN THE INVERSION LAYER OF MOSFETS
FU, KY
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 292 - 293
[8] A SMALL GEOMETRY MOSFET MODEL FOR CAD APPLICATIONS
GUEBELS, PP
VANDEWIELE, F
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (04) : 267 - 273
[9] A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTH
MA, YR
WANG, KL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1825 - 1827
[10] ELECTRON-MOBILITY IN N-CHANNEL DEPLETION-TYPE MOS-TRANSISTORS
OHNO, Y
OKUTO, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 190 - 194

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