ELECTRON-MOBILITY IN N-CHANNEL DEPLETION-TYPE MOS-TRANSISTORS

被引：13

作者：

OHNO, Y

OKUTO, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：190 / 194

页数：5

相关论文

共 11 条

[1] IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS
BERZ, F
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 903 - &
[2] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 187 - 192
[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[4] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS
FANG, F
TRIEBWASSER, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &
[5] CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
BERZ, F
FLINN, I
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 775 - +
[6] NISHIUCHI K, 1978, IEDM TECH DIG, P26
[7] COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
OHNO, Y
OKUTO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 65 - 69
[8] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR
SCHARFETTER, DL
GUMMEL, HK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[10] ZIMAN JM, 1960, ELECT PHONONS, P428