学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ELECTRON-MOBILITY IN N-CHANNEL DEPLETION-TYPE MOS-TRANSISTORS
被引:13
作者
:
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 02期
关键词
:
D O I
:
10.1109/T-ED.1982.20682
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:190 / 194
页数:5
相关论文
共 11 条
[1]
IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS
BERZ, F
论文数:
0
引用数:
0
h-index:
0
BERZ, F
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 903
-
&
[2]
EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
: 187
-
192
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
TRIEBWASSER, S
论文数:
0
引用数:
0
h-index:
0
TRIEBWASSER, S
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 410
-
&
[5]
CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
MURPHY, NSJ
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
BERZ, F
FLINN, I
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
FLINN, I
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(10)
: 775
-
+
[6]
NISHIUCHI K, 1978, IEDM TECH DIG, P26
[7]
COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 65
-
69
[8]
LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR
SCHARFETTER, DL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
SCHARFETTER, DL
GUMMEL, HK
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
GUMMEL, HK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 64
-
+
[9]
PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
论文数:
0
引用数:
0
h-index:
0
STERN, F
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
HOWARD, WE
[J].
PHYSICAL REVIEW,
1967,
163
(03):
: 816
-
&
[10]
ZIMAN JM, 1960, ELECT PHONONS, P428
←
1
2
→
共 11 条
[1]
IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS
BERZ, F
论文数:
0
引用数:
0
h-index:
0
BERZ, F
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 903
-
&
[2]
EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
: 187
-
192
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
TRIEBWASSER, S
论文数:
0
引用数:
0
h-index:
0
TRIEBWASSER, S
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 410
-
&
[5]
CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
MURPHY, NSJ
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
BERZ, F
FLINN, I
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
FLINN, I
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(10)
: 775
-
+
[6]
NISHIUCHI K, 1978, IEDM TECH DIG, P26
[7]
COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 65
-
69
[8]
LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR
SCHARFETTER, DL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
SCHARFETTER, DL
GUMMEL, HK
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
GUMMEL, HK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 64
-
+
[9]
PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
论文数:
0
引用数:
0
h-index:
0
STERN, F
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
HOWARD, WE
[J].
PHYSICAL REVIEW,
1967,
163
(03):
: 816
-
&
[10]
ZIMAN JM, 1960, ELECT PHONONS, P428
←
1
2
→