TRANSCONDUCTANCE DEGRADATION IN VLSI DEVICES

被引：5

作者：

AKERS, LA ^{[1
]}

HOLLY, M ^{[1
]}

FORD, JM ^{[1
]}

机构：

[1] MOTOROLA SEMICOND RES & DEV LAB,PHOENIX,AZ 85062

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 06期

关键词：

SEMICONDUCTOR DEVICES; MOS;

D O I：

10.1016/0038-1101(85)90132-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results from small geometry VLSI devices show that as devices are scaled, transconductance degradation occurs. This results from scaling either the length or width. A model using a mobility expression developed by P. Wang is used to predict transconductance in small MOS devices. Comparison between theory and experiments is excellent.

引用

页码：605 / 609

页数：5

共 14 条

[11] SZE SM, 1981, PHYSICS SEMICONDUCTO
[12] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION
TAKEDA, E
SUZUKI, N
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 111 - 113
[13] DEVICE CHARACTERISTICS OF SHORT-CHANNEL AND NARROW-WIDTH MOSFETS
WANG, PP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 779 - 786
[14] A MOBILITY MODEL FOR CARRIERS IN THE MOS INVERSION LAYER
YAMAGUCHI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 658 - 663

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