TRANSCONDUCTANCE DEGRADATION IN VLSI DEVICES

被引:5
作者
AKERS, LA [1 ]
HOLLY, M [1 ]
FORD, JM [1 ]
机构
[1] MOTOROLA SEMICOND RES & DEV LAB,PHOENIX,AZ 85062
关键词
SEMICONDUCTOR DEVICES; MOS;
D O I
10.1016/0038-1101(85)90132-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experimental results from small geometry VLSI devices show that as devices are scaled, transconductance degradation occurs. This results from scaling either the length or width. A model using a mobility expression developed by P. Wang is used to predict transconductance in small MOS devices. Comparison between theory and experiments is excellent.
引用
收藏
页码:605 / 609
页数:5
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