SPREADING RESISTANCE IN SUB-MICRON MOSFETS

[1] ANTOGNETTI P, 1981, DEC IEEE INT EL DEV

[2] BACCARANI G, 1982, JUN DEV RES C FORT C

[3] BINNS KJ, 1963, ANAL COMPUTATION ELE

[4] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[5] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[6] El-Mansy Y. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P16

[7] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[8] Scott D. B., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P94

[9] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[1] ANTOGNETTI P, 1981, DEC IEEE INT EL DEV

[2] BACCARANI G, 1982, JUN DEV RES C FORT C

[3] BINNS KJ, 1963, ANAL COMPUTATION ELE

[4] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[5] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[6] El-Mansy Y. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P16

[7] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[8] Scott D. B., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P94

[9] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661