AN IMPROVED METHOD OF MOSFET MODELING AND PARAMETER EXTRACTION

[1] BACCARANI G, 1984, IEE P 1, V2, P62

[2] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[3] GOODNICK SM, 1983, J VAC SCI TECHNOL B, V3, P803

[4] GREENFIELD J, 1979, IEDM

[5] KLAASSEN FM, 1976, PHILIPS RES REP, V31, P71

[6] MERKEL G, 1972, IEEE T ELECTRON DEVI, V19, P681

[7] EXPERIMENTAL VERIFICATION OF SURFACE QUANTIZATION OF AN N-TYPE INVERSION LAYER OF SILICON AT 300 AND 77 DEGREES K [J]. PHYSICAL REVIEW B, 1972, 5 (10): : 4208 - &

[8] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[9] ELECTRON-MOBILITY IN SHORT-CHANNEL MOSFETS WITH SERIES RESISTANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 959 - 961

[10] Sabnis A. G., 1979, IEDM

[1] BACCARANI G, 1984, IEE P 1, V2, P62

[2] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[3] GOODNICK SM, 1983, J VAC SCI TECHNOL B, V3, P803

[4] GREENFIELD J, 1979, IEDM

[5] KLAASSEN FM, 1976, PHILIPS RES REP, V31, P71

[6] MERKEL G, 1972, IEEE T ELECTRON DEVI, V19, P681

[7] EXPERIMENTAL VERIFICATION OF SURFACE QUANTIZATION OF AN N-TYPE INVERSION LAYER OF SILICON AT 300 AND 77 DEGREES K [J]. PHYSICAL REVIEW B, 1972, 5 (10): : 4208 - &

[8] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[9] ELECTRON-MOBILITY IN SHORT-CHANNEL MOSFETS WITH SERIES RESISTANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 959 - 961

[10] Sabnis A. G., 1979, IEDM