Mechanics of the ion layer gas reaction -: A preparation method of nanocrystalline thin layers

被引：7

作者：

Muffler, HJ ^{[1
]}

Fischer, CH ^{[1
]}

Giersig, M ^{[1
]}

Bär, M ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.1464649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanocrystalline CdS thin layers can be prepared using the ion layer gas reaction (ILGAR), a low-cost deposition technique for compound semiconductor thin films. We investigated the layers by optical spectroscopy and transmission electron microscopy, and found that lower CdCl2 precursor concentrations and thicker films favor larger nanoparticles and a lower band gap energy, whereby the concentration effect is more pronounced. The nucleation mechanism of the CdCl2 precursor seems to determine the particle size and the probability of its growth. A minimum CdS particle diameter of 4.7 nm has been extrapolated, which corresponds to an optical band gap energy of 2.83 eV, as a result of quantum confinement. ILGAR enables deposition of nanoparticles of controlled size. (C) 2002 American Institute of Physics.

引用

页码：6691 / 6694

页数：4

共 13 条

[11]

MULLIN JW, 1972, CRYSTALLIZATION, P142

[12] Optical properties of CdS nanocrystalline films prepared by a precipitation technique [J].

Nanda, KK ;

Sarangi, SN ;

Mohanty, S ;

Sahu, SN .

THIN SOLID FILMS, 1998, 322 (1-2) :21-27

[13] PHOTOCHEMISTRY OF SEMICONDUCTOR COLLOIDS .14. PHOTOCHEMISTRY OF COLLOIDAL SEMICONDUCTORS - ONSET OF LIGHT-ABSORPTION AS A FUNCTION OF SIZE OF EXTREMELY SMALL CDS PARTICLES [J].

WELLER, H ;

SCHMIDT, HM ;

KOCH, U ;

FOJTIK, A ;

BARAL, S ;

HENGLEIN, A ;

KUNATH, W ;

WEISS, K ;

DIEMAN, E .

CHEMICAL PHYSICS LETTERS, 1986, 124 (06) :557-560

← 1 2 →