Structural investigation of the titanium/diamond film interface

被引:23
作者
Terranova, ML
Rossi, M
Vitali, G
机构
[1] IST NAZL FIS NUCL,I-00133 ROME,ITALY
[2] INFM,I-00161 ROME,ITALY
[3] UNIV ROMA LA SAPIENZA,DIPARTIMENTO ENERGET,ROME,ITALY
关键词
D O I
10.1063/1.363228
中图分类号
O59 [应用物理学];
学科分类号
摘要
Reflection high-energy electron diffraction (RHEED) technique, with the possibility to shift, rotate, and tilt the sample with respect to the electron beam, has been used to investigate the structure of the transition layers formed at the interface between titanium substrate and diamond films. The diamond films were deposited on partially masked titanium sheets by means of the chemical vapor deposition technique, using CH4/H-2 mixtures activated by hot filament. Deposition experiments have been performed at 650 and 730 degrees C. The RHEEB analysis has been carried out in selected area conditions on the boundary between coated and uncoated regions; it enabled us to detect and characterise the inhomogeneous and complex structural configuration of the diamond/titanium interface. For the samples deposited at 650 degrees C we identified, starting from the titanium surface: a mixed phase constituted by titanium hydride and carbide precipitates, graphitic clusters embedded into a titanium hydride/carbide phase, TiC layers, and finally diamond films. At 730 degrees C both growth location and formation sequence of the various structures were found to be similar to these detected at 650 degrees C, resulting, however, in the complete absence of the Ti hydride phase. A first indication about the time scale of the process has been determined from structural investigations of deposits grown by runs lasting from 3 up to 20 min. A schematic model is presented which describes the growth sequence of the various species inside the intermediate reaction layers. (C) 1996 American Institute of Physics.
引用
收藏
页码:3552 / 3560
页数:9
相关论文
共 43 条
[1]   QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION [J].
AGER, JW ;
DRORY, MD .
PHYSICAL REVIEW B, 1993, 48 (04) :2601-2607
[2]  
ANGUS JC, 1973, J APPL PHYS, V44, P1428
[3]  
BADZIAN A, 1992, MATER RES SOC SYMP P, V250, P339
[4]   CRYSTALLIZATION OF DIAMOND CRYSTALS AND FILMS BY MICROWAVE ASSISTED CVD .2. [J].
BADZIAN, AR ;
BADZIAN, T ;
ROY, R ;
MESSIER, R ;
SPEAR, KE .
MATERIALS RESEARCH BULLETIN, 1988, 23 (04) :531-548
[5]   CRYSTALLIZATION OF DIAMOND FROM THE GAS-PHASE .1. [J].
BADZIAN, AR ;
DEVRIES, RC .
MATERIALS RESEARCH BULLETIN, 1988, 23 (03) :385-400
[6]   SYNTHESIS OF DIAMOND THIN-FILMS BY HOT-FILAMENT-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].
BONNOT, AM .
THIN SOLID FILMS, 1990, 185 (01) :111-121
[7]   DIAMOND FILM NUCLEATION AND INTERFACE CHARACTERIZATION [J].
BOU, P ;
VANDENBULCKE, L ;
HERBIN, R ;
HILLION, F .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (08) :2151-2159
[8]   Microstructure and phase morphology of diamond thin films by synchrotron radiation X-ray diffraction [J].
Cappuccio, G ;
Leoni, M ;
Scardi, P ;
Sessa, V ;
Terranova, ML .
ADVANCES IN CRYSTAL GROWTH, 1996, 203 :285-289
[9]  
CAPPUCCIO G, 1994, MATER SCI FORUM, V166, P325, DOI 10.4028/www.scientific.net/MSF.166-169.325
[10]  
CAPPUCCIO G, COMMUNICATION