QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION

被引：367

作者：

AGER, JW ^{[1
]}

DRORY, MD ^{[1
]}

机构：

[1] CRYSTALLUME,MENLO PK,CA 94025

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.48.2601

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectroscopy is used to study residual stress in diamond grown on Ti-6Al-4V by chemical vapor deposition. A general model is developed to use Raman spectroscopy to measure biaxial stress in polycrystalline, diamond-structure films. The as-grown film has 7.1 GPa of residual compressive stress, consistent with the difference in thermal-expansion coefficients between the diamond film and the substrate. Examination of the Raman spectra of the film in the vicinity of Brale indentations reveals that residual stresses in the film of up to approximately 17 GPa can be accommodated in the film before delamination occurs.

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页码：2601 / 2607

页数：7

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