RAMAN MICROPROBE STUDY OF SILICON-ON-INSULATOR AND GERMANIUM-ON-INSULATOR STRUCTURES

被引：4

作者：

CAMPBELL, IH ^{[1
]}

FAUCHET, PM ^{[1
]}

LEE, EH ^{[1
]}

AWAL, MA ^{[1
]}

机构：

[1] AT&T ENGN RES CTR,PRINCETON,NJ 08540

来源：

THIN SOLID FILMS | 1987年 / 154卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(87)90369-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：249 / 255

页数：7

共 9 条

[1] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[2] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[3]

GONZALEZHERNAND.J, 1983, SPECTROSOPIC CHARACT, V452, P44

[4]

Hayes W, 1978, SCATTERING LIGHT CRY

[5] RAMAN MICROPROBE DETERMINATION OF LOCAL CRYSTAL ORIENTATION [J].

HOPKINS, JB ;

FARROW, LA .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1103-1110

[6] EXTENDED GROWTH OF SUBGRAIN-BOUNDARY-FREE SILICON-ON-INSULATOR VIA THERMAL-GRADIENT VARIATION [J].

LEE, EH .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :959-961

[7]

LEE EH, 1984, MATER RES SOC S P, V23, P471

[8] RAMAN MICROPROBE ANALYSIS OF STRESS IN GE AND GAAS/GE ON SIO2-COATED SI SUBSTRATES [J].

NISHIOKA, T ;

SHINODA, Y ;

OHMACHI, Y .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :276-281

[9] MEASUREMENT OF LOCAL STRESS IN LASER-RECRYSTALLIZED LATERAL EPITAXIAL SILICON FILMS OVER SILICON DIOXIDE USING RAMAN-SCATTERING [J].

ZORABEDIAN, P ;

ADAR, F .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :177-179

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