MEASUREMENT OF LOCAL STRESS IN LASER-RECRYSTALLIZED LATERAL EPITAXIAL SILICON FILMS OVER SILICON DIOXIDE USING RAMAN-SCATTERING

被引：54

作者：

ZORABEDIAN, P ^{[1
]}

ADAR, F ^{[1
]}

机构：

[1] INSTRUMENTS SA INC,METUCHEN,NJ 08840

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.94271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：177 / 179

页数：3

共 19 条

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