RAMAN MICROPROBE ANALYSIS OF STRESS IN GE AND GAAS/GE ON SIO2-COATED SI SUBSTRATES

被引：17

作者：

NISHIOKA, T

SHINODA, Y

OHMACHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：276 / 281

页数：6

共 24 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[2] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[3]

BUECK SRJ, 1982, APPL PHYS LETT, V40, P895

[4] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[5] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1253-1255

[6] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[7] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICON [J].

ENGSTROM, H ;

BATES, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2921-2925

[8] A LATTICE THEORY OF MORPHIC EFFECTS IN CRYSTALS OF DIAMOND STRUCTURE [J].

GANESAN, S ;

MARADUDI.AA ;

OITMAA, J .

ANNALS OF PHYSICS, 1970, 56 (02) :556-&

[9] MICROSTRAIN IN LASER-CRYSTALLIZED SILICON ISLANDS ON FUSED-SILICA [J].

LYON, SA ;

NEMANICH, RJ ;

JOHNSON, NM ;

BIEGELSEN, DK .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :316-318

[10] RAMAN STUDY OF LASER ANNEALED SILICON [J].

MORHANGE, JF ;

KANELLIS, G ;

BALKANSKI, M .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :805-808

← 1 2 3 →