EXTENDED GROWTH OF SUBGRAIN-BOUNDARY-FREE SILICON-ON-INSULATOR VIA THERMAL-GRADIENT VARIATION

被引：13

作者：

LEE, EH

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：959 / 961

页数：3

共 20 条

[1]

CHALMERS B, 1964, PRINCIPLES SOLIDIFIC, P150

[2] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2 [J].

GEIS, MW ;

SMITH, HI ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

THOMPSON, CV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1178-1183

[3] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[4] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2812-2818

[5] ISLAND-EDGE EFFECTS OF TRANSISTORS FABRICATED IN LARGE-AREA LASER MICRO-ZONE CRYSTALLIZED SI ON INSULATOR [J].

HERBST, D ;

BOSCH, MA ;

TEWKSBURY, SR .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :280-282

[6]

HURLE DTJ, 1962, PROG MATER SCI, V10, P79

[7]

JONES DW, 1974, CRYST GROWTH, P236

[8]

Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7

[9]

KNAPP JA, 1983, MATER RES SOC S P, V13, P557

[10] LATERAL ZONE GROWTH AND CHARACTERIZATION OF DEVICE QUALITY SILICON-ON-INSULATOR WAFERS [J].

LAM, HW ;

PINIZZOTTO, RF ;

MALHI, SDS ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1083-1085

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