ISLAND-EDGE EFFECTS OF TRANSISTORS FABRICATED IN LARGE-AREA LASER MICRO-ZONE CRYSTALLIZED SI ON INSULATOR

被引：5

作者：

HERBST, D

BOSCH, MA

TEWKSBURY, SR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 08期

关键词：

D O I：

10.1109/EDL.1983.25733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：280 / 282

页数：3

共 7 条

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[3]

Kamins T. I., 1982, International Electron Devices Meeting. Technical Digest, P420

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

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GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

[5] ISLAND-EDGE EFFECTS IN C-MOS-SOS TRANSISTORS [J].

LEE, SN ;

KJAR, RA ;

KINOSHITA, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :971-978

[6] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

NG, KK ;

CELLER, GK ;

POVILONIS, EI ;

FRYE, RC ;

LEAMY, HJ ;

SZE, SM .

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[7]

TIHANYI J, 1975, SOLID STATE ELECTRON, V18, P308

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