LATERAL ZONE GROWTH AND CHARACTERIZATION OF DEVICE QUALITY SILICON-ON-INSULATOR WAFERS

被引：13

作者：

LAM, HW ^{[1
]}

PINIZZOTTO, RF ^{[1
]}

MALHI, SDS ^{[1
]}

VAANDRAGER, BL ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, CENT RES LABS, MAT SCI LAB, DALLAS, TX 75265 USA

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1083 / 1085

页数：3

共 9 条

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[2] ZONE-MELTING RECRYSTALLIZATION OF 3-IN-DIAM SI FILMS ON SIO2-COATED SI SUBSTRATES [J].

FAN, JCC ;

TSAUR, BY ;

CHAPMAN, RL ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :186-188

[3] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :900-902

[4] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

LAM, HW ;

PINIZZOTTO, RF ;

TASCH, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986

[5]

LAM HW, 1980, ECS M HOLLYWOOD, P1198

[6] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[7] SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATION [J].

PINIZZOTTO, RF ;

LAM, HW ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :388-390

[8]

Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499

[9] EFFECTS OF SUBGRAIN BOUNDARIES ON CARRIER TRANSPORT IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :79-82

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