Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires

被引：106

作者：

Hsu, CL ^{[1
]}

Chang, SJ

Lin, YR

Li, PC

Lin, TS

Tsai, SY

Lu, TH

Chen, IC

机构：

[1] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan

[2] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[5] Ind Technol Res Inst, Mat Res Labs, Hsinchu 310, Taiwan

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 416卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2005.09.066

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520 degrees C. It was found that length of these ZnO nanowires was around 2.0 mu m while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：75 / 78

页数：4

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