Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates

被引：61

作者：

Hsu, CL

Chang, SJ

Lin, YR

Tsai, SY

Chen, IC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31040, Taiwan

来源：

CHEMICAL COMMUNICATIONS | 2005年 / 28期

关键词：

D O I：

10.1039/b504881h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Vertically well aligned P- doped ZnO nanowires were prepared on ZnO-Ga/glass templates at 550 degrees C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the wurtzite structure, oriented in the c-axis direction; the P- doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission.

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收藏

页码：3571 / 3573

页数：3

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