Optical characteristics of arsenic-doped ZnO nanowires

被引：80

作者：

Lee, W ^{[1
]}

Jeong, MC ^{[1
]}

Myoung, JM ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期

关键词：

D O I：

10.1063/1.1840124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping. (C) 2004 American Institute of Physics.

引用

页码：6167 / 6169

页数：3

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