Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

被引：1251

作者：

Look, DC ^{[1
]}

Reynolds, DC

Litton, CW

Jones, RL

Eason, DB

Cantwell, G

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] AF Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] Eagle Picher Technol LLC, Miami, OK USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1504875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity=4x10(1) Omega cm; hole mobility=2 cm(2)/V s; and hole concentration=9x10(16) cm(-3). Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about 10(19) cm(-3) in the N-doped sample, but only about 10(17) cm(-3) in the undoped sample. (C) 2002 American Institute of Physics.

引用

页码：1830 / 1832

页数：3

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