Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source

P-type ZnO films with carrier density 3-6 x 10(18) L m(-3), resistivity 2-5 Omega cm and Hall mobility = 0.1-0.4 cm(2) V-1 s(-1) have been grown on fused silica and glass substrate by pulsed laser reactive deposition using a pure metal Zn target in N2O plasma. The N acceptor doping was effectively enhanced using the active N formed by N2O gas passing through an electron resonance source during the pulsed laser reactive deposition process. P-type conduction was achieved by optimizing the microwave-input Dowel. (E) and deposition pressure (P-N2O). These electrical properties are sufficient for some practical applications. We expect this result to facilitate the fabrication of transparent p-n homojunctions suitable for light-emitting diodes. (C) 2001 Elsevier Science B.V. All rights reserved.