An oxide-diluted magnetic semiconductor: Mn-doped ZnO

被引：671

作者：

Fukumura, T ^{[1
]}

Jin, ZW

Ohtomo, A

Koinuma, H

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Tokyo 152, Japan

[3] Japan Sci & Technol Corp, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1-xMnxO films (x < 0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 10(19) cm(-3) can be doped into the Zn1-xMnxO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures. (C) 1999 American Institute of Physics. [S0003-6951(99)03547-0].

引用

页码：3366 / 3368

页数：3

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