NEGATIVE MAGNETORESISTANCE IN VERY STRONG ACCUMULATION LAYERS ON ZNO SURFACES

被引：18

作者：

GOLDSTEIN, Y ^{[1
]}

GRINSHPAN, Y ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,RACAH INST PHYS,JERUSALEM 91000,ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.39.953

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：953 / 956

页数：4

共 19 条

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[4] QUANTUM PROPERTIES OF STRONG ACCUMULATION LAYERS ON ZNO SURFACES [J].

EGER, D ;

MANY, A ;

GOLDSTEIN, Y .

SURFACE SCIENCE, 1976, 58 (01) :18-24

[5] NEGATIVE MAGNETORESISTANCE IN CHANNEL (100) SILICON INVERSION LAYERS [J].

EISELE, I ;

DORDA, G .

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[6]

EMLYANENKO OV, 1976, SOV PHYS SEMICOND, V9, P1001

[7]

GOLDSTEIN Y, TO BE PUBLISHED

[8]

GRINSHPAN Y, TO BE PUBLISHED

[9] MAGNETORESISTANCE OF SILICON SURFACE INVERSION LAYERS [J].

HESS, K .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 31 (01) :159-164

[10]

KHOSLA RP, 1966, J PHYS SOC JPN, VS 21, P557

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