GROUP-III IMPURITY DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING

被引：486

作者：

MINAMI, T

SATO, H

NANTO, H

TAKATA, S

机构：

[1] Kanazawa Inst of Technology,, Electron Device System Lab,, Kanazawa, Jpn, Kanazawa Inst of Technology, Electron Device System Lab, Kanazawa, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 10期

关键词：

ELECTRIC CONDUCTIVITY - SEMICONDUCTING FILMS - Impurities - SPUTTERING;

D O I：

10.1143/JJAP.24.L781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described. The resistivity is lowered by doping of B, Al, Ga and In into ZnO films. The characteristic features of ZnO films doped with group III elements except for B are their high carrier concentration and low mobility. Variation of the mobility with the impurity content is roughly governed by the ionized impurity scattering. It is shown that the doped ZnO films exhibit the resistivity dependence on film thickness below 300 nm.

引用

页码：L781 / L784

页数：4

共 16 条

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