ELECTRICAL AND OPTICAL-PROPERTIES OF BIAS SPUTTERED ZNO THIN-FILMS

被引:39
作者
CAPORALETTI, O
机构
来源
SOLAR ENERGY MATERIALS | 1982年 / 7卷 / 01期
关键词
D O I
10.1016/0165-1633(82)90097-1
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
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页码:65 / 73
页数:9
相关论文
共 15 条
[1]   RELATIONSHIP BETWEEN DEPOSITION CONDITIONS AND PHYSICAL-PROPERTIES OF SPUTTERED ZNO [J].
BARNES, JO ;
LEARY, DJ ;
JORDAN, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1636-1640
[2]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]  
Brodie D. E., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P468
[4]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[5]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[6]   SOME ELECTRICAL PROPERTIES OF ZINC OXIDE SEMICONDUCTOR [J].
HAHN, EE .
JOURNAL OF APPLIED PHYSICS, 1951, 22 (07) :855-863
[7]   CONDUCTIVITY AND HALL EFFECT OF ZNO AT LOW TEMPERATURES [J].
HARRISON, SE .
PHYSICAL REVIEW, 1954, 93 (01) :52-62
[8]   HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J].
HUTSON, AR .
PHYSICAL REVIEW, 1957, 108 (02) :222-230
[9]   LOW-TEMPERATURE ELECTRICAL PROPERTIES OF ZN-DOPED ZNO [J].
LI, PW ;
HAGEMARK, KI .
JOURNAL OF SOLID STATE CHEMISTRY, 1975, 12 (3-4) :371-375
[10]   THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE [J].
MOSS, TS .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (418) :775-782