STRUCTURES AND ELECTRICAL PROPERTIES OF ZINC OXIDE FILMS PREPARED BY LOW PRESSURE SPUTTERING SYSTEM

被引：62

作者：

HADA, T

WASA, K

HAYAKAWA, S

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(71)90032-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / &

共 8 条

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[2] CRYSTALLOGRAPHIC ORIENTATION OF ZINC OXIDE FILMS DEPOSITED BY TRIODE SPUTTERING
FOSTER, NF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 111 - &
[3] HEILAND G, 1958, SOLID STATE PHYS, V8, P248
[4] KENIGSBERG NL, 1969, SOV PHYS-SOLID STATE, V10, P2235
[5] THE DIELECTRIC CONSTANT OF ZINC OXIDE OVER A RANGE OF FREQUENCIES
LANGTON, NH
MATTHEWS, D
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (11): : 453 - 456
[6] MAIBON RM, 1967, APPL PHYS LETTERS, V10, P9
[7] PREPARATION OF ZNO THIN FILMS BY SPUTTERING OF COMPOUND IN OXYGEN AND ARGON - (0.1 TO 10 MU THICK - SUBSTRATES - SAPPHIRE PYREX GLASS GOLD PLATE - ULTRASONICS - PIEZOELECTRICS - TRANSDUCERS - E)
ROZGONYI, GA
POLITO, WJ
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (09) : 220 - &
[8] LOW PRESSURE SPUTTERING SYSTEM OF MAGNETRON TYPE
WASA, K
HAYAKAWA, S
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (05) : 693 - &