LOW PRESSURE SPUTTERING SYSTEM OF MAGNETRON TYPE

被引：41

作者：

WASA, K

HAYAKAWA, S

机构：

[1] Wireless Research Laboratory, Matsushita Electric Industrial Company, Limited, Kadoma, Osaka

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1969年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.1684039

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new design of a low pressure sputtering system of magnetron type is described. The optimum sputtering conditions are discussed in relation to the system. It is shown that this system is able to produce uniform thin films with good reproducibility, and especially to produce a metal oxide film by reactive sputtering. Some typical configurations are presented for use in the laboratory and on a production scale. © 1969 The American Institute of Physics.

引用

页码：693 / &

共 12 条

[1] BROWN SC, 1959, BASIC DATA PLASMA PH, P5
[2] EFFICIENT LOW PRESSURE SPUTTERING IN A LARGE INVERTED MAGNETRON SUITABLE FOR FILM SYNTHESIS
GILL, WD
KAY, E
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (03) : 277 - &
[3] HASS G, 1966, PHYSICS THIN FILM ED, V3, P88
[4] HAYAKAWA S, 1965, J PHYS SOC JPN, V20, P1962
[5] KAY E, 1962, ADVANCES ELECTRONICS, V17, P278
[6] ELECTRICAL PROPERTIES OF MIXED OXIDE FILM OF PBO AND TIO2
KUSAO, K
WASA, K
HAYAKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (04) : 437 - &
[7] MAISSEL LI, 1966, PHYSICS THIN FILMS, V3, P88
[8] MARTON L, 1962, ADVANCES ELECTRON ED, V17, P278
[9] PENNING FM, 1936, Patent No. 2146025
[10] REACTIVELY SPUTTERED TITANIUM RESISTORS CAPACITORS AND RECTIFIERS FOR MICROCIRCUITS
WASA, K
HAYAKAWA, S
[J]. MICROELECTRONICS RELIABILITY, 1967, 6 (03) : 213 - &

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